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| SI7403DN New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -20 0.135 @ VGS = -2.5 V -3.8 FEATURES ID (A) -4.5 rDS(on) (W) 0.1 @ VGS = -4.5 V D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package - Low Thermal Resistance, RthJC - Low 1.07-mm Profile APPLICATIONS D Load Switching D PA Switching S SS PowerPAKt 1212-8 3.30 mm S 1 2 3 S S 3.30 mm G 4 G P-Channel MOSFET D 8 7 6 5 D D D Bottom View DD DD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS -3.0 3.5 1.9 -55 to 150 -3.2 -20 -1.3 1.5 0.8 W _C -2.1 A Symbol VDS VGS 10 secs Steady State -20 "8 Unit V -4.5 -2.9 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71431 S-03390--Rev. A, 02-Apr-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 28 65 4.5 Maximum 35 81 5.6 Unit _C/W C/W 1 SI7403DN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "4.5 V VDS = -20 V, VGS = 0 V VDS = -20 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V ID(on) VDS = -5 V, VGS = -2.5 V VGS = -4.5 V, ID = -3.3 A rDS(on) gfs VSD VGS = -2.5 V, ID = -2.9 A VDS = -10 V, ID = -3.3 A IS = -1.6 A, VGS = 0 V -10 -4 0.078 0.110 8.8 0.8 -1.2 0.1 0.135 A -0.45 "100 -1 -5 V nA mA m Symbol Test Condition Min Typ Max Unit On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea W S V Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1.6 A, di/dt = 100 A/ms VDD = -10 V, RL = 10 W ID ^ -1.6 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -4.5 A 8.6 1.5 3.1 27 17 52 45 50 50 30 80 70 80 ns 14 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 4.5, 4, 3.5 V 20 Transfer Characteristics TC = -55_C 16 I D - Drain Current (A) 3V I D - Drain Current (A) 16 125_C 12 2.5 V 8 2V 4 1.5 V 0 0 1 2 3 4 5 0 0 1 2 3 4 12 25_C 8 4 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71431 S-03390--Rev. A, 02-Apr-01 SI7403DN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.30 1400 1200 r DS(on)- On-Resistance ( W ) 0.24 C - Capacitance (pF) 1000 800 600 400 Coss 200 Crss 0.00 0 4 8 12 16 20 0 0 4 8 12 16 20 Ciss Vishay Siliconix Capacitance 0.18 VGS = 2.5 V 0.12 VGS = 4.5 V 0.06 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 5 VDS = 10 V ID = 3.3 A Gate Charge 1.8 On-Resistance vs. Junction Temperature V GS - Gate-to-Source Voltage (V) r DS(on)- On-Resistance ( W ) (Normalized) 4 1.6 VGS = 4.5 V ID = 3.3 A 1.4 3 1.2 2 1.0 1 0.8 0 0 2 4 6 8 10 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 20 0.30 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) 10 r DS(on)- On-Resistance ( W ) 0.24 0.18 ID = 3.3 A 0.12 TJ = 150_C TJ = 25_C 0.06 1 0 0.25 0.50 0.75 1.00 1.25 1.50 0.00 0 2 4 6 8 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71431 S-03390--Rev. A, 02-Apr-01 www.vishay.com 3 SI7403DN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power, Juncion-To-Ambient 0.3 40 V GS(th) Variance (V) Power (W) 0.2 ID = 250 mA 0.1 30 20 0.0 10 -0.1 -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 68_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 www.vishay.com 4 Document Number: 71431 S-03390--Rev. A, 02-Apr-01 |
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